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| WFP640 Silicon N-Channel MOSFET Features 18A,200V,RDS(on)(Max 0.18)@VGS=10V Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Isolation voltage(VISO=4000V AC) Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology. This latest technology has especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor control. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.12 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 12 72 30 258 13 5.5 140 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 200 18 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case- to -Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.89 62.5 Units /W /W /W Rev.A Sep.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFP640 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=18A (Note4,5) 8 22 13 39 tf toff VDD=160V, 45 70 RG=25 (Note4,5) 327 108 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=200V,VGS=0V ID=250 A,VGS=0V VDS=10V,ID=250 A VGS=10V,ID=9A VDS=50V,ID=9A VDS=25V, VGS=0V, f=1MHz VDD=100V, ID=18A Min 30 200 2 6.7 - Type 1300 54 104 Max 100 10 4 0.18 1760 245 65 - Unit nA V A V V S pF ns Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=18A,VGS=0V IDR=18A,VGS=0V, dIDR / dt =100 A / s Min - Type 1.4 195 1.48 Max 18 72 1.5 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=18A,VDD=50V,RG=0 ,Starting TJ=25 3.ISD18A,di/dt300A/us,VDD Steady, all for your advance WFP640 Fig.1 On-State Characteristics Fig.2 Transfer characteristics Fig.3 On -Resistance Variation vs Drain Current Fig.4 Maximum Avalanche Energy vs On-State Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFP640 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance WFP640 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFP640 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFP640 TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
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